Growth of Si on Ag(111) and determination of large commensurate unit cell of high-temperature phase
Year: 2014
Type: article
Abstract: We studied the structural transition for silicon adsorption on Ag(111) by using low-energy electron diffraction (LEED) and Auger electron spectroscopy at various substrate temperatures during deposition. We obtained a single phase of the (4 × 4) structure at 520 K, which was reported as a silicene. At 620 K, the (4 × 4) structure changed to a high-temperature phase which was determined as by LEED, while in preceding works, it was assigned to a quasi or structure. Although the high-temperature phase had not been observed as a single phase, we obtained LEED patterns with a single phase for it, which enabled us to explain all the diffraction spots on the basis of the kinematic theory including double diffraction. The was obtained by the multiplication of a subunit cell. We concluded that the and phases could instead be represented as a phase, and we proposed a possible atomic model.
Institution: Kyushu University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1995291809
