Work

Improved performance of submicrometer-gate GaAs MESFETs with an Al/sub 0.3/Ga/sub 0.7/As buffer layer grown by metal organic vapor phase epitaxy

Year: 1989

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/16.19931

Authors: K. Hiruma, M. Mori, E. Yanokura, H. Mizuta, S. Takahashi

Institution: Hitachi (Japan)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1995324992

FWCI: 0.945

Cites: 10

Cited by: 4

Related to: 10