Work

CL and dark field TEM analysis of composition change at interfaces in InGaP/GaAs junctions grown by MOCVD

Year: 2011

Type: article

Abstract: Dark field transmission electron microscopy by using both the (200) two beam diffraction mode and the high angle annular dark field (HAADF) method has been used to check the presence and composition of unwanted layer(s), that had formed at the place of the nominal 10 nm thick GaAs QW grown on top of the InGaP barrier in MOCVD InGaP/GaAs samples, and whose existence was suggested by cathodoluminescence. It is shown that the nominal 10 nm GaAs QW has been replaced by 2 layers: a thin one made of In0,15Ga0,85As0,80P0.20 closer to InGaP followed by a second one made of either GaAs0.91P0.09or In0,05Ga0,95As0,84P0.16. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Source: Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

DOI: 10.1002/pssc.201084004

Authors: C. Frigeri, A. A. Shakhmin, D. A. Vinokurov, M. V. Zamoryanskaya

Institutions: Institute of Materials for Electronics and Magnetism, Ioffe Institute

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W1995417772

FWCI: 0.311

Cites:

Cited by: 2

Related to: 10