Work

Gain of blue and cyan InGaN laser diodes

Year: 2011

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.3541785

Authors: T. Lermer, A. Gomez-Iglesias, M. Sabathil, J. Müller, S. Lutgen, U. Strauss, B. Pasenow, J. Hader, J. V. Moloney, S. W. Koch, W. Scheibenzuber, U. T. Schwarz

Institutions: Osram Opto Semiconductors, University of Arizona, Philipps University of Marburg, Fraunhofer Institute for Applied Solid State Physics

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Air Force Office of Scientific Research

Award: G7168295700

OpenAlex ID: W1995418690

FWCI: 3.793

Cites: 12

Cited by: 38

Related to: 10