Year: 1990
Type: article
Abstract: BiSrCaCuO thin films were deposited on MgO(100) single crystal substrates by metalorganic chemical vapor deposition at 500°C and 2 Torr using fluorinated β-diketonate complexes of Sr, Ca and Cu and triphenylbismuth. An inverted vertical reaction chamber allowed uniform film growth over large areas (7.7 cm diameter). The as-deposited films were amorphous mixtures of oxides and fluorides and a two step anealing protocol (750°C+850–870°C) was developed which gives c-axis oriented films of Bi2Sr2Ca1Cu2O x . The post-annealed films showed onsets in the resistive transition of 110 K and zero resistivity was achieved by 83 K. Critical current densities as high as 1.1×104 A/cm2 were obtained at 25 K.
DOI: 10.1143/jjap.29.l596
Authors: Norihito Hamaguchi, J. Vigil, R. Gardiner, P. S. Kirlin
Institution: Advanced Materials Technology (United States)
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1995449105