Year: 2003
Type: article
Abstract: In order to passivate the GaAs surface, silicon-nitride films were fabricated by using laser CVD method. SiH $_4$ and NH $_3$ were used to obtain SiN films in the range of 100∼300 $^{\circ}C$ on p-type (100) GaAs substrate. To determine interface characteristics of the metal-insulator-GaAs structure, electrical measurements were performed such as C-V curves and deep level transient spectroscopy (DLTS). The results show that the hysteresis was reduced and interface trap density was lowered to 1,012 ∼ 1,013 at 100 ∼ 200 $^{\circ}C$ . According to the study of surface leakage current, the passivated CaAs has less leakage current compared to non-passivated substrate.
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W19958683