Work

AlGaN-based ultraviolet light-emitting diodes grown on AlN epilayers

Year: 2004

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.1819506

Authors: K. H. Kim, Z. Y. Fan, M. Khizar, M. L. Nakarmi, J. Y. Lin, H. X. Jiang

Institution: Kansas State University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1995919982

FWCI: 5.286

Cites: 14

Cited by: 87

Related to: 10