Growth-in-place deployment of in-plane silicon nanowires
Year: 2011
Type: article
Abstract: Up-scaling silicon nanowire (SiNW)-based functionalities requires a reliable strategy to precisely position and integrate individual nanowires. We here propose an all-in-situ approach to fabricate self-positioned/aligned SiNW, via an in-plane solid-liquid-solid growth mode. Prototype field effect transistors, fabricated out of in-plane SiNWs using a simple bottom-gate configuration, demonstrate a hole mobility of 228 cm2/V s and on/off ratio >103. Further insight into the intrinsic doping and structural properties of these structures was obtained by laser-assisted 3 dimensional atom probe tomography and high resolution transmission electron microscopy characterizations. The results could provide a solid basis to deploy the SiNW functionalities in a cost-effective way.
Source: Applied Physics Letters
DOI: 10.1063/1.3659895
Institutions: Centre National de la Recherche Scientifique, École Polytechnique, Laboratoire de Physique des Interfaces et des Couches Minces, Groupe de Physique des Matériaux, Institut National des Sciences Appliquées Rouen Normandie, Institut d'Électronique et des Technologies du numéRique, Université de Rennes
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W1996098751