Work

The effect of the boron doping level on the thermal behavior of end-of-range defects in silicon

Year: 1997

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.119563

Authors: C. Bonafos, A. Claverie, D. Alquier, C. Bergaud, A. Martinez, L. Laânab, D. Mathiot

Institutions: Centre National de la Recherche Scientifique, Centre d’Élaboration de Matériaux et d’Études Structurales, Laboratoire d'Analyse et d'Architecture des Systèmes, Mohammed V University

Language: English

Topic: Silicon and Solar Cell Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1996143157

FWCI: 2.885

Cites: 8

Cited by: 32

Related to: 10