Work

Depth profiling of ultra-thin oxynitride gate dielectrics by using MCs2+ technique

Year: 2008

Type: article

Source: Applied Surface Science

DOI: 10.1016/j.apsusc.2008.06.047

Authors: D. Gui, Z.Q. Mo, Z.X. Xing, Y.H. Huang, Y.N. Hua, S.P. Zhao, L.Z. Cha

Institution: Tsinghua University

Language: English

Topic: Ion-surface interactions and analysis

Subfield: Surfaces, Coatings and Films

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1996168331

FWCI: 0.218

Cites: 3

Cited by: 3

Related to: 10