Work

Study of the growth mechanisms of GaN/(Al, Ga)N quantum dots: Correlation between structural and optical properties

Year: 2011

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.3552296

Authors: S. Sergent, B. Damilano, T. Huault, J. Brault, M. Korytov, O. Tottereau, P. Vennéguès, M. Leroux, F. Semond, J. Massies

Institutions: Centre National de la Recherche Scientifique, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Université Nice Sophia Antipolis

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Agence Nationale de la Recherche

OpenAlex ID: W1996207682

FWCI: 0.897

Cites: 22

Cited by: 12

Related to: 10