Work

Anticrossing of Landau levels in HgTe/CdHgTe (013) quantum wells with an inverted band structure

Year: 2015

Type: article

Source: Journal of Experimental and Theoretical Physics Letters

DOI: 10.1134/s0021364014240175

Authors: M. S. Zholudev, F. Teppe, S. V. Morozov, M. Orlita, C. Consejo, S. Ruffenach, W. Knap, V. I. Gavrilenko, S. A. Dvoretskii, N. N. Mikhailov

Institutions: Russian Academy of Sciences, N. I. Lobachevsky State University of Nizhny Novgorod, Centre National de la Recherche Scientifique, Laboratoire Charles Coulomb, Université Montpellier 2, Université Joseph Fourier, Laboratoire National des Champs Magnétiques Intenses, Siberian Branch of the Russian Academy of Sciences, Institute of Semiconductor Physics

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1996220660

FWCI: 2.518

Cites: 27

Cited by: 36

Related to: 10