Work

Effect of Ti doping on Ta2O5 stacks with Ru and Al gates

Year: 2008

Type: article

Source: Applied Surface Science

DOI: 10.1016/j.apsusc.2008.03.076

Authors: A. Paskaleva, M. Tapajna, E. Atanassova, K. Frohlich, A. Vincze, E. Dobročka

Institutions: Bulgarian Academy of Sciences, Georgi Nadjakov Institute of Solid State Physics, Slovak Academy of Sciences, Institute of Electrical Engineering of the Slovak Academy of Sciences, International Laser Center

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Agentúra na Podporu Výskumu a Vývoja

OpenAlex ID: W1996599208

FWCI: 3.577

Cites: 24

Cited by: 20

Related to: 10