Work

Electronic passivation of GaAs surfaces through the formation of arsenic—sulfur bonds

Year: 1989

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.101451

Authors: C. J. Sandroff, M. S. Hegde, L. A. Farrow, C. C. Chang, J. P. Harbison

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1996623232

FWCI: 17.89

Cites: 20

Cited by: 181

Related to: 10