Year: 2003
Type: article
Abstract: We report on spin-polarized tunneling in fully epitaxial Fe/MgO/Fe/Co tunnel junctions. By increasing the thickness of the insulating layer (tMgO), we have strongly enhanced the tunnel magnetoresistance. Values up to ∼100% at 80 K (∼67% at room temperature) have been observed with tMgO=2.5 nm. This tunnel magnetoresistance ratio, which is much larger than the one predicted by the Jullière’s model, can be understood in the framework of ab initio calculations.
Source: Applied Physics Letters
DOI: 10.1063/1.1586785
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1996807596