A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) UTB SOI MOSFETs including substrate induced surface potential effects
Year: 2014
Type: article
Source: Solid-State Electronics
Authors: Ajit Kumar, Pramod Kumar Tiwari
Institution: National Institute of Technology Rourkela
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1997016355