Work

Optical Investigation on the Growth Process of GaAs during Migration-Enhanced Epitaxy

Year: 1989

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.28.l1880

Authors: Naoki Kobayashi, Yoshiji Horikoshi

Institution: NTT (Japan)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1997117675

FWCI: 9.657

Cites: 3

Cited by: 156

Related to: 10