Work

Density of states in the channel material of low temperature polycrystalline silicon thin film transistors

Year: 2000

Type: article

Source: Journal of Non-Crystalline Solids

DOI: 10.1016/s0022-3093(99)00937-0

Authors: K Mourgues, A Rahal, T Mohammed-Brahim, M Sarret, J.P Kleider, C Longeaud, A Bachrouri, A Romano-Rodriguez

Institutions: Centre National de la Recherche Scientifique, Université Rennes 1, University of Sciences and Technology Houari Boumediene, Supélec, Laboratoire de Génie Électrique et Électronique de Paris, Universitat de Barcelona

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1997118787

FWCI: 1.297

Cites: 9

Cited by: 12

Related to: 10