Work

2.7–3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers

Year: 1994

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.111603

Authors: A. N. Baranov, A. N. Imenkov, V. V. Sherstnev, Yu. P. Yakovlev

Institutions: Centre National de la Recherche Scientifique, Institut d'Électronique et des Systèmes, Université Montpellier 2, Ioffe Institute

Language: English

Topic: Semiconductor Lasers and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1997222684

FWCI: 9.798

Cites: 9

Cited by: 43

Related to: 10