Work

Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate

Year: 2014

Type: article

Abstract: Based on the quasi-two-dimensional (2D) solution of Poisson's equation in two continuous channel regions, an analytical threshold voltage model for short-channel junctionless dual-material cylindrical surrounding-gate (JLDMCSG) metal-oxide-semiconductor field-effect transistor (MOSFET) is developed. Using the derived model, channel potential distribution, horizontal electrical field distribution, and threshold voltage roll-off of JLDMCSG MOSFET are investigated. Compared with junctionless single-material CSG (JLSGCSG) MOSFET, JLDMCSG MOSFET can effectively suppress short-channel effects and simultaneously improve carrier transport efficiency. It is also revealed that threshold voltage roll-off of JLDMCSG can be significantly reduced by adopting both a small oxide thickness and a small silicon channel radius. The model is verified by comparing its calculated results with that obtained from three-dimensional (3D) numerical device simulator ISE.

Source: Chinese Physics B

DOI: 10.1088/1674-1056/23/1/018501

Authors: Cong Li, Yi-Qi Zhuang, Li Zhang, Gang Jin

Institution: Xidian University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

Funders: National Natural Science Foundation of China, Ministry of Education of the People's Republic of China, Fundamental Research Funds for the Central Universities

Awards: G5985708351, G6795363697