Work

Etch Pit Study of GaAs{001} LPE Layer by Molten KOH

Year: 1978

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.17.447

Authors: Takao Takenaka, Hiroshi Hayashi, Saburoh Yamamoto, Kazuhisa Murata, Toshio Inoguchi

Institution: Sharp Corporation (Japan)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Grantová Agentura České Republiky

OpenAlex ID: W1997242403

FWCI: 0.344

Cites:

Cited by: 10

Related to: 10