Work

Stimulated THz Emission of Strained p-Ge and SiGe/Si Quantum-Well Structures Doped with Shallow Acceptors.

Year: 2006

Type: conference-paper

Abstract: The origin and properties of stimulated terahertz (THz) emission in uniaxially compressed p-Ge and strained SiGe/Si quantum-well structures doped with shallow acceptors are discussed. The THz emission is associated with the stimulated optical transitions between resonant and localized acceptor states. Spectra of the emission are presented. The regimes of emission excitation and possibility of cw operation are examined.

Source: ECS Transactions

DOI: 10.1149/1.2355869

Authors: Miron S. Kagan, Igor Altukhov, Valeriy Sinis, Elena Chirkova, Stanislav Paprotskiy, Irina Yassievich, Maksim Odnoblyudov, Aleksey Prokofiev, James Kolodzey

Institutions: Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Ioffe Institute, University of Delaware

Language: English

Topic: Terahertz technology and applications

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

Funders: International Science and Technology Center, Russian Foundation for Basic Research

OpenAlex ID: W1997249376

FWCI: 2.638

Cites:

Cited by: 6

Related to: 10