Tunable band gap and doping type in silicene by surface adsorption: towards tunneling transistors
Year: 2014
Type: article
Abstract: By using first-principles calculations, we predict that a sizable band gap can be opened at the Dirac point of silicene without degrading silicene's electronic properties with n-type doping by Cu, Ag, and Au adsorption, p-type doping by Ir adsorption, and neutral doping by Pt adsorption. A silicene p-i-n tunneling field effect transistor (TFET) model is designed by the adsorption of different transition metal atoms on different regions of silicene. Quantum transport simulations demonstrate that silicene TFETs have an on-off ratio of 10(3), a small sub-threshold swing of 77 mV dec(-1), and a large on-state current of over 1 mA μm(-1) under a supply voltage of about 1.7 V.
Source: Nanoscale
DOI: 10.1039/c4nr00028e
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
Funders: University of Pennsylvania, National Natural Science Foundation of China, Ministry of Education, India, Materials Research Science and Engineering Center, Harvard University, Program for New Century Excellent Talents in University, National Key Research and Development Program of China, Fundamental Research Funds for the Central Universities
OpenAlex ID: W1997270927