Influence of deposition rate and hydrogen/helium dilution on the structural relaxation of a-SiGe:H network prepared at low substrate temperature
Year: 1994
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.356646
Authors: A. R. Middya, Swati Ray
Institution: Indian Association for the Cultivation of Science
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1997282903