Scaling down of amorphous indium gallium zinc oxide thin film transistors on the polyethersulfone substrate employing the protection layer of parylene-C for the large-scale integration
Year: 2010
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.3454775
Institutions: Korea University, Korea Institute of Science and Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1997339932