Work

Characterisation of Si III and Si IV, metastable forms of silicon at ambient pressure

Year: 1989

Type: article

Source: Semiconductor Science and Technology

DOI: 10.1088/0268-1242/4/4/029

Authors: G Weill, J L Mansot, G Sagon, C Carlone, J M Besson

Institution: Université Pierre-et-Marie-Curie

Language: English

Topic: High-pressure geophysics and materials

Subfield: Geophysics

Field: Earth and Planetary Sciences

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1997645663

FWCI: 0.332

Cites: 10

Cited by: 89

Related to: 10