Work

A novel partial SOI LDMOSFET with a trench and buried P layer for breakdown voltage improvement

Year: 2011

Type: article

Source: Superlattices and Microstructures

DOI: 10.1016/j.spmi.2011.07.013

Authors: Ali A. Orouji, S.E. Jamali Mahabadi, P. Keshavarzi

Institution: Semnan University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1997688593

FWCI: 0.635

Cites: 15

Cited by: 34

Related to: 10