Work

Hetero-epitaxial growth of cubic GaN on GaAs by gas-source molecular beam epitaxy

Year: 1992

Type: article

Source: Surface Science

DOI: 10.1016/0039-6028(92)91086-q

Authors: S. Yoshida, H. Okumura, S. Misawa, E. Sakuma

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1997757835

FWCI: 1.611

Cites: 7

Cited by: 29

Related to: 10