Work

Optical investigation of micrometer and nanometer-size individual GaN pillars fabricated by reactive ion etching

Year: 2002

Type: article

Abstract: We present an optical investigation of GaN pillars using both micro-Raman (μ-Raman) and microphotoluminescence (μ-PL) spectroscopy. GaN pillars of diameter ranging from 100 nm to 5 μm were fabricated by electron beam lithography and reactive ion etching (RIE) with SiCl4 plasma. Optical measurements of both μ-Raman and μ-PL on individual pillars show consistent variations in the properties of the fabricated GaN structures as a function of GaN pillar size. μ-PL mapping gives strong evidence for defect-induced donors and/or acceptors near the facets of the RIE etched pillars. RIE for the nanostructuration of GaN could be used in the future to allow spectroscopic studies of a few or single quantum objects such as GaN quantum dots.

Source: Journal of Applied Physics

DOI: 10.1063/1.1468908

Authors: F. Demangeot, J. Gleize, J. Frandon, M. A. Renucci, M. Kuball, D. Peyrade, L. Manin-Ferlazzo, Y. Chen, N. Grandjean

Institutions: Centre National de la Recherche Scientifique, Université Toulouse III - Paul Sabatier, Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes, University of Bristol, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W1997990136

FWCI: 2.514

Cites: 20

Cited by: 30

Related to: 10