Work

Frequency dependence of the reverse-biased capacitance of gold-doped silicon P+N step junctions

Year: 1964

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/t-ed.1964.15337

Authors: C.T. Sah, V.G.K. Reddi

Institutions: University of Illinois Urbana-Champaign, Fairchild Semiconductor (United States)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1997996924

FWCI: 1.024

Cites: 5

Cited by: 163

Related to: 10