Work

Optical spectroscopy of the trivalent silicon defect at the Si- SiO2 interface

Year: 1985

Type: article

Source: Physical review. B, Condensed matter

DOI: 10.1103/physrevb.31.1194

Authors: N. M. Johnson, Warren B. Jackson, M. D. Moyer

Institution: Palo Alto Research Center

Language: Latvian

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1998032136

FWCI: 4.865

Cites: 13

Cited by: 29

Related to: 10