Work

Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy

Year: 2003

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.1579871

Authors: J. W. Chiou, J. C. Jan, H. M. Tsai, W. F. Pong, M.-H. Tsai, I.-H. Hong, R. Klauser, J. F. Lee, C. W. Hsu, H. M. Lin, C. C. Chen, C. H. Shen, L. C. Chen, K. H. Chen

Institutions: Tamkang University, National Sun Yat-sen University, National Synchrotron Radiation Research Center, National Taiwan Normal University, Institute of Atomic and Molecular Sciences, Academia Sinica, Academia Sinica, National Taiwan University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1998055258

FWCI: 1.887

Cites: 20

Cited by: 42

Related to: 10