Year: 1995
Type: article
Abstract: A new simulation-based approach for specifying an attenuated phase-shifting mask (att-PSM) is proposed with systematically evaluating entire process parameters related to illumination sources, resist development in a wafer and process latitude. Exposure-defocus and mask fabrication latitude (EDM) methodology is adopted for considering the process latitude of exposure, defocus and mask line width. Transmittance and mask bias are targetted in the specifications, because these parameters are essential in the selection of the optimum att-PSM characteristics. The suppression of optical proximity effects by modified beam illumination (MBI) is also verified by the new evaluation method. The technique of combined att-PSMs and MBI can be applied to various types of dense hole patterns with the appropriate transmittance and mask bias.
DOI: 10.1143/jjap.34.6590
Authors: Ichiro Kagami, Minoru Sugawara, Hiroichi Kawahira, Keisuke Tsudaka, Kiichi Ishikawa, Satoru Nozawa, Hideo Shimizu, Tohru Ogawa
Institution: Sony (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1998062853