Year: 1996
Type: article
Abstract: Au electrodes were deposited on p-ZnSe layers grown by molecular beam epitaxy (MBE) and gas source (GS) MBE. The influences of the chemical pretreatment before electrode formation and the following heat treatment on electrical characteristics were investigated. All of the samples showed nonohmic current flow. In MBE-grown samples before heat treatment, pretreatment lowers the voltage of current flow rise from 6 V to 4–5 V. On the other hand, GSMBE-grown samples with and without pretreatment showed current flow rise at 4–5 V. The increase of the voltage of current flow rise was observed after heat treatment, irrespective of pretreatment and the growth method. This is related to the difference in the as-grown surface between MBE and GSMBE. The resistivity of the p-ZnSe layer increased slightly after heat treatment below the growth temperature.
DOI: 10.1143/jjap.35.5995
Authors: Ken-ichi Ohtsuka, Muneyoshi Suita, Yasuyuki Endoh, Masayuki Imaizumi, Toshiro Isu Toshiro Isu, Masahiro Nunoshita Masahiro Nunoshita
Institution: Mitsubishi Electric (Japan)
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1998110905