Work

Dual-Color Emission in Hybrid III–Nitride/ZnO Light Emitting Diodes

Year: 2010

Type: article

Abstract: We report dual-color production of the blue and green regions using hybrid nitride/ZnO light emitting diode (LED) structures grown on ZnO substrates. The blue emission is ascribed to the near-band edge transition in InGaN while green emission is related to Zn-related defect levels formed by the unintentional interdiffusion of Zn into the InGaN active layer from the ZnO substrates.

Source: Applied Physics Express

DOI: 10.1143/apex.3.022101

Authors: Gon Namkoong, Elaissa Trybus, Maurice C. Cheung, W. Alan Doolittle, Alexander N. Cartwright, Ian Ferguson, Tae-Yeon Seong, Jeff Nause

Institutions: Old Dominion University, Georgia Institute of Technology, University at Buffalo, State University of New York, Korea University, Cermet (United States)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

Funder: National Science Foundation

OpenAlex ID: W1998204178

FWCI: 0.532

Cites: 25

Cited by: 9

Related to: 10