Work

Dry etch damage in GaAs metal-semiconductor field-effect transistors exposed to inductively coupled plasma and electron cyclotron resonance Ar plasmas

Year: 1997

Type: article

Source: Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

DOI: 10.1116/1.589518

Authors: F. Ren, J. W. Lee, C. R. Abernathy, S. J. Pearton, C. Constantine, C. Barratt, R. J. Shul

Institutions: University of Florida, Sandia National Laboratories

Language: English

Topic: Low-Pressure Plasma Processing and Diagnostics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: U.S. Department of Defense, U.S. Department of Energy, Air Force Office of Scientific Research, Sandia National Laboratories

OpenAlex ID: W1998216206

FWCI: 1.923

Cites: 17

Cited by: 11

Related to: 10