Drain-conductance optimization in nanowire TFETs by means of a physics-based analytical model
Year: 2013
Type: article
Source: Solid-State Electronics
Authors: E. Gnani, A. Gnudi, S. Reggiani, G. Baccarani
Institution: University of Bologna
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1998327802
