Work

Study of surface defects on 3C–SiC films grown on Si(111) by CVD

Year: 2003

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/s0022-0248(03)01024-8

Authors: M.J Hernández, G Ferro, T Chassagne, J Dazord, Y Monteil

Institutions: Universidad Autónoma de Madrid, Lyon 1 Université, Laboratoire des Multimatériaux et Interfaces

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Centre National de la Recherche Scientifique

OpenAlex ID: W1998368152

FWCI:

Cites: 14

Cited by: 27

Related to: 10