Microstructure and strain relaxation in organometallic vapor phase epitaxy of strain-compensated GaInP/InAsP multilayers on InP(001)
Year: 1997
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.365049
Authors: P. Desjardins, H. Marchand, L. Isnard, R. A. Masut
Institution: Polytechnique Montréal
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1998434052