Simple Physical Model for the Space-Charge Capacitance of Metal-Oxide-Semiconductor Structures
Year: 1964
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.1702880
Authors: A. S. Grove, E. H. Snow, B. E. Deal, C. T. Sah
Institution: Fairchild Semiconductor (United States)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1998444499