Work

Interesting effects of the piezoelectric and internal electric fields on the band gap of InAs/GaAs/AlGaAs:δ-Si HEMTs

Year: 2014

Type: article

Source: The European Physical Journal Applied Physics

DOI: 10.1051/epjap/2014130343

Authors: Mahmoud Daoudi, Najla Khalifa, Ines Dhifallah, Abdelkarim Ouerghi

Institutions: Research and Technology Center of Energy, Centre National de la Recherche Scientifique

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1998466966

FWCI:

Cites: 27

Cited by: 2

Related to: 10