Influence of carrier overflow on the forward-voltage characteristics of InGaN-based light-emitting diodes
Year: 2014
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.4902023
Institutions: Hanyang University, Sangji University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1998614719