Work

Epitaxial Pt Films with Different Orientations Grown on (100)Si Substrates by RF Magnetron Sputtering

Year: 2005

Type: article

Abstract: Epitaxial Pt films with (111) and (100) orientations were grown on Y2O3-stabilized ZrO2 (YSZ)-covered (100)Si substrates by RF sputtering. (111)Pt films were epitaxially grown on (100)YSZ∥(100)Si substrates at 580 and 680°C, but competitive crystal orientations of (111) and (100) at 780°C. In contrast, a (100)-oriented epitaxial Pt film was grown at 550°C on a (100)YSZ∥(100)Si substrate with a (100)-oriented epitaxial (100)Ir buffer layer. This orientational control of epitaxial Pt films enables the epitaxial growth of perovskite layers with different orientations on thermally and chemically stable Pt bottom electrodes grown on (100)Si substrates.

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.44.5102

Authors: Shoji Okamoto, Takayuki Watanabe, Kensuke Akiyama, Satoru Kaneko, Hiroshi Funakubo, Susumu Horita

Institutions: Tokyo Institute of Technology, Kanagawa Institute of Industrial Science and Technology, Japan Advanced Institute of Science and Technology

Language: English

Topic: Electronic and Structural Properties of Oxides

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W1998628598

FWCI: 1.278

Cites: 11

Cited by: 25

Related to: 10