Difference between C4F8 and C5F8 plasmas in surface reaction processes for selective etching of SiO2 over Si3N4
Year: 2000
Type: article
Source: Thin Solid Films
Institutions: Kyoto University, Panasonic (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1998985496