Work

GaN schottky barrier MOSFET using transparent source/drain electrodes for UV-optoelectronic integration

Year: 2012

Type: article

Source: Solid-State Electronics

DOI: 10.1016/j.sse.2011.12.007

Authors: Byung-Kwon Jung, Chang-Ju Lee, Tae-Hyeon Kim, Dong-Seok Kim, Myoung-Bok Lee, Jung-Hee Lee, Sung-Ho Hahm

Institutions: Kyungpook National University, Agency for Defense Development

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Research Foundation of Korea, Korea Science and Engineering Foundation, Ministry of Education, Science and Technology

Awards: G1013462473, G4413546054, G5094452345

OpenAlex ID: W1999080309

FWCI: 0.323

Cites: 4

Cited by: 5

Related to: 10