General framework about defect creation at the Si∕SiO2 interface
Year: 2009
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.3133096
Authors: C. Guerin, V. Huard, A. Bravaix
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1999169264