Year: 2014
Type: article
Abstract: Porous silicon light trapping layers (por-Si LTL) were manufactured using electrochemical etching. Optical measurements have shown the improved por-Si LTL optical properties versus bulk silicon. The p-n junction was formed by boron diffusion from borosilicate glasses. Scanning Kelvin Force Microscopy (SKFM) and Tunnelling Atomic Force Microscopy (TUNA) techniques were used to determine the location of p-n junction in samples with porous silicon light trapping layers. DOI: http://dx.doi.org/10.5755/j01.ms.20.2.6326
Source: Materials Science
Institution: Center for Physical Sciences and Technology
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $539
OpenAlex ID: W1999545992