Work

Energy distribution of surface states in the Si band-gap for MOS diodes obtained from XPS measurements under biases

Year: 1995

Type: article

Source: Surface Science

DOI: 10.1016/0039-6028(94)00769-1

Authors: H. Kobayashi, Y. Yamashita, T. Mori, Y. Nakato, K.H. Park, Y. Nishioka

Institutions: The University of Osaka, Texas Instruments (Japan)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1999714461

FWCI: 6.02

Cites: 32

Cited by: 24

Related to: 10