Modulation of Flat-band Potential and Increase in Photovoltage for n-Si Electrodes by Formation of Halogen Atom Terminated Surface Bonds
Year: 1997
Type: article
Source: Chemistry Letters
DOI: 10.1246/cl.1997.1041
Authors: Morio Fujitani, Reiko Hinogami, J G Jia, Masaki Ishida, Kazuhiko Morisawa, Shinji Yae, Yoshihiro Nakato
Institution: The University of Osaka
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2000217938