Year: 2002
Type: article
Abstract: We determine the effect of annealing on highly strained GaInAs/GaAs quantum wells (QWs) grown on a (100) n-type GaAs substrate by low-pressure metal-organic vapor phase epitaxy. Highly strained QWs suffer from degradation caused by high-temperature thermal annealing due to its high strain and it is indicated that the overgrowth temperature should be decreased. The comparison of the annealing effects with and without a GaInAs strained buffer layer (SBL) inserted below QWs was carried out. The SBL is effective in maintaining the good crystal quality of highly strained QWs after the overgrowth.
DOI: 10.1143/jjap.41.l612
Institution: Tokyo Institute of Technology
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2000219651